Determination of Ionization Rates in the Principal Crystallographic Directions in Silicon.
Final technical rept. 1 May 79-30 Apr 81,
CORNELL UNIV ITHACA NY SCHOOL OF ELECTRICAL ENGINEERING
Pagination or Media Count:
Measurements of the electron and hole multiplication in silicon p-n junctions and the associated electron and hole ionization rates are presented for the three principal directions 100, 110, and 111. It is shown that published ionization threshold energies are inconsistent with the experimental data. The inconsistency is traced to the fact that the appropriate non-colinear wave vector constructions for conserving crystal momentum in the ionizing collision process were not considered in the previous threshold calculations. An approximate solution to collisions with non-colinear wave vectors is presented that shows qualitative agreement with the experimental observations. Author
- Solid State Physics