Accession Number:

ADA133402

Title:

Fabrication and Properties of Multilayer Structures

Descriptive Note:

Final technical rept. 1 Sep 1981-30 Sep 1982

Corporate Author:

STANFORD UNIV CA DEPT OF MATERIALS SCIENCE AND ENGINEERING

Personal Author(s):

Report Date:

1983-09-01

Pagination or Media Count:

50.0

Abstract:

The synthesis of SiC films and Pd2Si films via single source and dual source sputtering, respectively, has been experimentally investigated while the reactive sputter deposition of SiO sub x films has been theoretically analyzed. The SiO sub x film data requires a mobile precursor adsorption process to be operative for the oxygen and an oxygen sticking coefficient of between 1.56 x 10 to the minus 3rd power and 4.17 x 10 to the minus 3rd power. An analysis of in- situ electrical diagnostics of the films via a non-contact technique shows the method to be of marginal accuracy for the example selected. An important new formulation of the stress and elastic constant tensors in the vicinity of interfaces has been developed and applied to the simple example of adsorbed layersubstrate interactions via a parametric analysis. Atomic modeling of the SiO system yields peroxide bond formation for oxygen-rich 100 alpha- cristobalite surfaces. Radial distribution function and angular distribution function data have been calculated for bulk alpha-quartz and bulk alpha- cristobalite in good agreement with experiment.

Subject Categories:

  • Crystallography
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE