Accession Number:

ADA133363

Title:

Fiber Optic Light Emitting Diode.

Descriptive Note:

Final rept. 23 Apr 79-1 Aug 80,

Corporate Author:

ROCKWELL INTERNATIONAL THOUSAND OAKS CA ELECTRONICS RESEARCH CENTER

Personal Author(s):

Report Date:

1980-08-01

Pagination or Media Count:

34.0

Abstract:

Optimum conditions for the growth of lattice-matched double heterostructures from two material systems, GaInAsPInP and GaAlAsSbGaSb, are described. The quantum efficiency and power output of surface-emitting L.E.D.s 1.3 micrometer and 1.55 micrometer fabricated from both material systems are given. A model relating the fraction of injected electrons to the separation between the direct and indirect conduction band minima is used to explain the low quantum efficiency observed for the GaAlAsSbGaSb L.E.D.s. The spectral width, near and far field of typical 1.3 micrometer GaInAsPInP L.E.D.s were measured. Finally, the modulation bandwidth and coupling efficiency of a packaged device into an optical fiber with a numerical aperture of 0.2 are presented.

Subject Categories:

  • Fiber Optics and Integrated Optics
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE