AlGaAsSb Vapor Phase Epitaxy and Laser Program.
Final technical rept. Oct 80-Oct 82,
ROCKWELL INTERNATIONAL THOUSAND OAKS CA MICROELECTRONICS RESEARCH AND DEVELOPMENT CENTER
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As the transmission of glass optical fibers has been reduced to near the theoretical limits in the 1.2-1.6 micrometers wavelengths range, the interest in optical emitters and detectors operating in this spectral range has increased. Currently, state-of-the-art silica-based optical fibers have been produced with minimum loss of 0.2 dBkm at a wavelength of lambda 1.55 micrometers. The dispersion at this wavelength is also extremely low approx. 17 spnm-km. Emitters and detectors for this spectral region have been fabricated in two of the III-V quaternary materials systems i.e., A1GaAsSb and InGaAsP. The emphasis of this program was to develop the metalorganic chemical vapor deposition MOCVD materials technology for the growth of A1GaAsSb-GaSb and A1GaAsSb-InAs for heterostructure devices. Described in this work is the successful demonstration of the hetero-epitaxy of lattice-matched GaAsSb-InAs, GaSbInAs, GaA1SbGaSb with A1Sb mole fractions up to 0.37, and n- and p-type GaSbGaSb structure by MOCVD. In addition, Schottky barrier photodiodes fabricated from material grown by MOCVD clearly show that high quality crystalline material can be obtained using this process.
- Solid State Physics