Accession Number:

ADA133123

Title:

AlGaAsSb Vapor Phase Epitaxy and Laser Program.

Descriptive Note:

Final technical rept. Oct 80-Oct 82,

Corporate Author:

ROCKWELL INTERNATIONAL THOUSAND OAKS CA MICROELECTRONICS RESEARCH AND DEVELOPMENT CENTER

Personal Author(s):

Report Date:

1983-06-01

Pagination or Media Count:

99.0

Abstract:

As the transmission of glass optical fibers has been reduced to near the theoretical limits in the 1.2-1.6 micrometers wavelengths range, the interest in optical emitters and detectors operating in this spectral range has increased. Currently, state-of-the-art silica-based optical fibers have been produced with minimum loss of 0.2 dBkm at a wavelength of lambda 1.55 micrometers. The dispersion at this wavelength is also extremely low approx. 17 spnm-km. Emitters and detectors for this spectral region have been fabricated in two of the III-V quaternary materials systems i.e., A1GaAsSb and InGaAsP. The emphasis of this program was to develop the metalorganic chemical vapor deposition MOCVD materials technology for the growth of A1GaAsSb-GaSb and A1GaAsSb-InAs for heterostructure devices. Described in this work is the successful demonstration of the hetero-epitaxy of lattice-matched GaAsSb-InAs, GaSbInAs, GaA1SbGaSb with A1Sb mole fractions up to 0.37, and n- and p-type GaSbGaSb structure by MOCVD. In addition, Schottky barrier photodiodes fabricated from material grown by MOCVD clearly show that high quality crystalline material can be obtained using this process.

Subject Categories:

  • Crystallography
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE