Accession Number:

ADA129767

Title:

Semiconductor Materials for High Frequency Solid State Sources

Descriptive Note:

Quarterly rept.

Corporate Author:

SCIENTIFIC RESEARCH ASSOCIATES INC GLASTONBURY CT

Personal Author(s):

Report Date:

1983-05-01

Pagination or Media Count:

5.0

Abstract:

The purpose of this theoretical study is to provide guidelines for high frequency millimeter wave semiconductor materials selection. The theoretical methods used in the study are more general than those used in earlier studies in that transient nonequilibrium contributions are included. The results are directly applicable to submicron technology. In the study, material parameters are identified through band structure and phonon dispersion curve calculations and transport explicitly includes electron-phonon interactions as well as impurity scattering. Carrier velocity and time dependent currents are obtained through solutions to the first three moments of the Boltzmann transport equation. In the last reporting period a simple set of scaling rules were applied to the scattering rates of gallium arsenide. The scattering rates were doubled and halved. It was demonstrated that the response times for a scaled applied field were respectively halved and doubled. The upper frequency limit was anticipated as higher for the more rapid scattering rate.

Subject Categories:

  • Electrical and Electronic Equipment
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE