Study of the Physics of Insulating Films as Related to the Reliability of Metal-Oxide Semiconductor (MOS) Devices
Semi-annual technical rept. 17 Nov 1976-16 May 1977
IBM THOMAS J WATSON RESEARCH CENTER YORKTOWN HEIGHTS NY
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The enclosed paper discuss the trapped hole location and annihilation in Si, current and C-V instabilities in Si02 at high fields, annealing of neutral electron traps in irradiated oxides, A1 implanted into the Si02 layer of MOS structures, electron trapping as a result of A1 implanation, the initial oxidation regime of silicon oxidation and the electronic structure of Si02, SixGe1-x02, Ge02.
- Coatings, Colorants and Finishes
- Nuclear Physics and Elementary Particle Physics
- Solid State Physics