Accession Number:

ADA129601

Title:

Study of the Physics of Insulating Films as Related to the Reliability of Metal-Oxide Semiconductor (MOS) Devices

Descriptive Note:

Semi-annual technical rept. 17 Nov 1976-16 May 1977

Corporate Author:

IBM THOMAS J WATSON RESEARCH CENTER YORKTOWN HEIGHTS NY

Report Date:

1977-07-01

Pagination or Media Count:

125.0

Abstract:

The enclosed paper discuss the trapped hole location and annihilation in Si, current and C-V instabilities in Si02 at high fields, annealing of neutral electron traps in irradiated oxides, A1 implanted into the Si02 layer of MOS structures, electron trapping as a result of A1 implanation, the initial oxidation regime of silicon oxidation and the electronic structure of Si02, SixGe1-x02, Ge02.

Subject Categories:

  • Coatings, Colorants and Finishes
  • Nuclear Physics and Elementary Particle Physics
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE