Accession Number:

ADA129277

Title:

1.27 Micrometers Receiver Development.

Descriptive Note:

Final technical rept. 18 Jun 79-17 Jun 80,

Corporate Author:

ROCKWELL INTERNATIONAL THOUSAND OAKS CA MICROELECTRONICS RESEARCH AND DEVELOPMENT CENTER

Personal Author(s):

Report Date:

1983-03-01

Pagination or Media Count:

93.0

Abstract:

This program addressed performance improvements of GaA1AsSb avalanche photo-diodes and low noise GaAs MESFET transimpedance amplifier for 1.3 micron fiber optic hybrid receiver applications. Although material non-uniformity and device surface leakage problems require further work, GaA1AsSb is a most attractive lattice-matched 1.3 to 1.55 micron APD material with high gains, quantum efficiencies, and speeds exhibited in a variety of device structures. The GaAs monolithic preamplifier investigated in the program, capable of frequency operation is excess of 1 GHz with appropriate transimpedance, is an ideal front end for a fiber optic communication receiver or an APD array. Author

Subject Categories:

  • Infrared Detection and Detectors
  • Solid State Physics
  • Non-Radio Communications

Distribution Statement:

APPROVED FOR PUBLIC RELEASE