Angular-Resolved Electron Emission Studies of Microwave Materials.
Final scientific rept. 1 Jul 77-30 Apr 82,
MONTANA STATE UNIV BOZEMAN DEPT OF PHYSICS
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Experiments were performed to determine the electronic structure of III-V compound semiconductors and transition metals, for example, the cleavage surface of gallium arsenide and tungsten. The results, in addition to contributing to an understanding of these materials, formed the necessary background information for interpreting the fundamental physical and chemical properties of adatoms on the surface. Several overlayer systems were studied with emphasis being placed on Ge and GaAs 110 and oxygen on W an hydrogen on W. Theoretical modeling indicates that Ge monolayers essentially exhibit the interface states expected for the GeGaAs110 heterojunction. Ultraviolet photoemission UPS was the method used to measure the electronic structure which included the new techniques of angular resolution and polarization dependence. Synchrotron radiation was used as the radiation source so advantages of the polarizer, continuum extending into the far ultraviolet could be employed. Several of these experimental methods used to measure and interpret UPS data were developed in the program, for example, polarization-symmetry analysis and photon energy scanning of core threshold behavior. Core threshold studies yield information on the conduction band density of states bulk and surface and decay processes of the core hole. Studies were performed for the shallow levels of GaAs110, GaSe, and Pt. Author
- Atomic and Molecular Physics and Spectroscopy