Accession Number:

ADA128817

Title:

Plasma-Enhanced Deposition and Processing of Transition Metal Silicides.

Descriptive Note:

Final rept. 1 Oct 80-31 Jan 83,

Corporate Author:

CALIFORNIA UNIV BERKELEY DEPT OF CHEMICAL ENGINEERING

Personal Author(s):

Report Date:

1983-04-25

Pagination or Media Count:

22.0

Abstract:

Radiofrequency rf discharges of tungsten hexafluoxidehydrogen or molybdenumhexafluoridehydrogen have been used to deposit films of tungsten or molybdenum. The tungsten depositions resulted in high purity films with as-deposited resistivities ranging from 40 to 170 micron omega cm, depending upon the deposition conditions. Short 20 min heat treatments in hydrogennitrogen atmospheres at temperatures above 700 deg C resulted in a decrease in the resistivity of the films to approximately 8 micron omega-cm, essentially independent of the initial film resistivity. Unlike tungsten, molybdenum films displayed high 10,000 micron omega cm resistivities. These results were due to approximately 15 atomic percent fluorine incorporated into the film structure during deposition. Author

Subject Categories:

  • Inorganic Chemistry
  • Electrical and Electronic Equipment
  • Properties of Metals and Alloys
  • Plasma Physics and Magnetohydrodynamics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE