Accession Number:

ADA128695

Title:

Ion Implant Damage Regrowth and Characterization, and Depth Distribution of Defects and Impurities in Proton-Implanted GaAs

Descriptive Note:

Research and development status rept. 10 Feb-9 Aug 1982

Corporate Author:

HUGHES RESEARCH LABS MALIBU CA

Personal Author(s):

Report Date:

1982-12-31

Pagination or Media Count:

16.0

Abstract:

Cr and 0 together have been implanted into damaged amorphised and crystalline GaAs and annealed some of the material at 830 degrees C for 20 min. Annealed and unannealed samples have been SIMS profiled for Cr and for O. All are now being analyzed by TEM by Sadana at UC Berkeley. When the TEM results are available, the work will be reported.

Subject Categories:

  • Crystallography
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE