Accession Number:

ADA128694

Title:

Ion Implant Damage Regrowth and Characterization

Descriptive Note:

Research and development status rept. 10 Aug 1981-9 Feb 1982

Corporate Author:

HUGHES RESEARCH LABS MALIBU CA

Personal Author(s):

Report Date:

1982-06-30

Pagination or Media Count:

13.0

Abstract:

Three cross section transmission electron microscope XTEM micrographs show the development of crystal damage as a function of implantation fluence for 300 keV silver Ag implanted into Si. A fourth XTEM micrograph shows the depth distribution of defects for the 10 to the 15th powersq cm fluence annealed at 800 C that shows a buried defect layer and a surface damage layer. The depth distribution of Ag atoms measured by secondary ion mass spectrometry SIMS shows that the Ag atoms are located in these same two regions, demonstrating that the residual Ag atoms are complexed with the defect structure in annealed implanted Si. The XTEM micrograph for the 10 to the 14th powersq cm implant fluence shows a buried amorphous region with what appears to be a high density of microcrystallites within the amorphous layer. This structure is very interesting and we wish to study the origin and change within this layer with further annealing of these microcrystallites. These results favor the formation of an amorphous layer as the result of the overlapping of indivdual damage clusters, rather than from the accumulation of a critical density of point defects before crystalline Si transforms into the amorphous state.

Subject Categories:

  • Crystallography
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE