Accession Number:

ADA127716

Title:

Development of Indium-Antimonide Two-Dimensional Charge-Injection Device Array with Complete Charge Transfer.

Descriptive Note:

Final rept.,

Corporate Author:

GENERAL ELECTRIC CORPORATE RESEARCH AND DEVELOPMENT SCHENECTADY NY

Personal Author(s):

Report Date:

1982-04-01

Pagination or Media Count:

31.0

Abstract:

A non-etch-back fabrication technique has been developed for an InSb two-dimensional infrared sensitive charge injection device. This report summarizes the first phase of a two phase program and describes the fabrication technique and test results on a set of experimental configurations. The performance objectives relating to lag, well capacity, and charge transfer have been met. The second phase of this program has been initiated which is to fabricate the 16 x 64 2-D CID arrays. Author

Subject Categories:

  • Infrared Detection and Detectors
  • Nuclear Physics and Elementary Particle Physics
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE