Accession Number:

ADA127638

Title:

Fabricate Indium-Antimonide Two-Dimensional Charge Injection Device Array.

Descriptive Note:

Final rept.,

Corporate Author:

GENERAL ELECTRIC CORPORATE RESEARCH AND DEVELOPMENT SCHENECTADY NY

Personal Author(s):

Report Date:

1982-09-01

Pagination or Media Count:

29.0

Abstract:

The objective of this program was to fabricate 16x64 two-dimensional InSb CID arrays using the process sequence developed by GE CRD under contract N00173-80-C-0281. This process sequences does not involve a thick-thin cut back of the pixel gate oxide and therefore produces an essentially planar structure. InSb CID focal plane arrays with 16x64 elements have been fabricated and various 2-D CID modes demonstrated on test structures incorporated on the chips. Low threshold voltages, low density of states in the interfaces and in the gate oxides and dual-gate coupling between row and column gates of less than one volt have led to the demonstration of practical ideal mode behavior. Author

Subject Categories:

  • Electrical and Electronic Equipment
  • Infrared Detection and Detectors
  • Electricity and Magnetism
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE