Fabricate Indium-Antimonide Two-Dimensional Charge Injection Device Array.
GENERAL ELECTRIC CORPORATE RESEARCH AND DEVELOPMENT SCHENECTADY NY
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The objective of this program was to fabricate 16x64 two-dimensional InSb CID arrays using the process sequence developed by GE CRD under contract N00173-80-C-0281. This process sequences does not involve a thick-thin cut back of the pixel gate oxide and therefore produces an essentially planar structure. InSb CID focal plane arrays with 16x64 elements have been fabricated and various 2-D CID modes demonstrated on test structures incorporated on the chips. Low threshold voltages, low density of states in the interfaces and in the gate oxides and dual-gate coupling between row and column gates of less than one volt have led to the demonstration of practical ideal mode behavior. Author
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