Accession Number:

ADA127300

Title:

Microcircuit Device Reliability. Memory/LSI (Large Scale Integration) Data, Winter 1975-1976

Descriptive Note:

Corporate Author:

RELIABILITY ANALYSIS CENTER GRIFFISS AFB NY

Personal Author(s):

Report Date:

1976-01-01

Pagination or Media Count:

212.0

Abstract:

A complete assessment of the reliability aspects of LSI devices requires characterization of the fabrication techniques used to implement these devices. The procedures and the materials used in the device fabrication play an important role in the overall reliability characterization of the device. The fabrication procedures of the major LSI technologies are illustrated in this section. Technology included are Gold Doped TTL, Schottky TTL, Non-Gold Doped ECL, P-Channel MOS, Si Gate, N-Channel MOS, CMOS, and P-Channel MNOS.

Subject Categories:

  • Electrical and Electronic Equipment
  • Manufacturing and Industrial Engineering and Control of Production Systems

Distribution Statement:

APPROVED FOR PUBLIC RELEASE