Accession Number:

ADA126910

Title:

HgCdTe Fabrication Using Directed Energy Techniques

Descriptive Note:

Final technical rept.

Corporate Author:

SPIRE CORP BEDFORD MA

Report Date:

1983-02-01

Pagination or Media Count:

60.0

Abstract:

The goal of this research was to produce large-area, thin-film single-crystal HgCdTe material for infrared detectors. Single-crystal CdTe films were deposited by heteroepitaxial evaporation on muscovite mica substrates, and subsequently converted to single-crystal Hg1-x Cdx Te by vapor exchange at a constant temperature. These films had excellent stoichiometry, uniform composition, and good electrical properties however, the films were not useful on the mica substrates nor were they successfully transferred to other substrates. Attempts at depositing single-crystal CdTe films on sapphire, BaF2 zirconia, and quartz were unsuccessful. Attempts to grow single-crystal CdTe films on sapphire by liquid-phase epitaxy using pulsed electron beams to melt thin deposited films were also unsuccessful. It is believed that the goals of this program could be met by a different evaporation furnance design which would allow in situ cleaning of the substrate surface.

Subject Categories:

  • Infrared Detection and Detectors
  • Unmanned Spacecraft

Distribution Statement:

APPROVED FOR PUBLIC RELEASE