Ultraviolet Bleaching and Regeneration of Si Triple Bond Si3 Centers at the Si/SiO2 Interface of Thinly Oxidized Silicon Wafers
ARMY ELECTRONICS TECHNOLOGY AND DEVICES LAB FORT MONMOUTH NJ
Pagination or Media Count:
The Si triple bond Si3 defect revealed by electron spin resonance ESR at the SiSiO2 interface has been found to be very sensitive to ultraviolet UV radiation at 2537 A. With native oxides or very thin thermal oxides, UV bleached the signal, which then recovered slowly in room temperature air, or rapidly upon water immersion. Details of the bleaching suggest outer-oxide surface trapping by adsorbed oxygen, rather than bulk oxide traps. In HF-stripped silicon, an opposite UV effect was observed, i.e., an accelerated growth of Si triple bond Si3 centers. The physico-chemical responses of Si triple bond Si3 reflected several stages in the development of nascent oxides on silicon wafers. The UV trapping phenomenon further offers a potential method for determination of the energy levels of the Si triple bond Si3 defect, and thus for clarification of its role in interface trapping.
- Electrical and Electronic Equipment
- Manufacturing and Industrial Engineering and Control of Production Systems
- Ultraviolet Detection and Detectors