Interface States and Electron Spin Resonance Centers in Thermally Oxidized (111) and (100) Silicon Wafers
FAIRCHILD CAMERA AND INSTRUMENT CORP PALO ALTO CA ADVANCED RESEARCH AND DEVELOPMENT LABS
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Interface states and electron spin resonance centers have been observed and compared in thermally oxidized 111 and 100 silicon wafers subjected to various processing treatments. The ESR P sub b signal, previously assigned to interface Si---Si3 defects on 111 wafers, was found to have two components on 100 an Si---Si2O. The quantitative proportionality of P sub b spin concentration to midgap interface trap density D sub it is maintained on 100, and both are lower by a factor of about 3 compared to 111. This correlation persists over the range of oxidation temperatures 800-1200 deg C, for both n- and p-doped silicon, cooled by fast pull in oxygen, and cooled or annealed in nitrogen or argon. The correlation is independent of doping level. In samples with different oxide thickness, neither P sub b nor D sub it varied significantly over the range 100-2000 A, but P sub b was smaller at 50 A. In general, ESR is judged to offer promise for further studies of specific interface features.
- Solid State Physics