Accession Number:

ADA126622

Title:

Fundamental Studies of Growth, Doping and Transformation in Beta Silicon Carbide.

Descriptive Note:

Annual letter rept.,

Corporate Author:

NORTH CAROLINA STATE UNIV RALEIGH DEPT OF MATERIALS ENGINEERING

Personal Author(s):

Report Date:

1983-03-15

Pagination or Media Count:

26.0

Abstract:

High quality beta-SiC thin films are currently being grown for future microelectronic applications using chemical vapor deposition techniques. Additional efforts now underway or planned in this overall effort and described in this report include ion implanation and annealing as well as in-situ incorporation of electronically active dopants ion microprobe analyses of these dopes materials ion channeling Raman spectroscopy Hall and Hg-probe electrical measurements and high temperature x-ray diffraction studies and transmission electron microscopy to determine the effect of impurities of the beta-alpha transformation.

Subject Categories:

  • Physical Chemistry
  • Crystallography
  • Electricity and Magnetism
  • Nuclear Physics and Elementary Particle Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE