Accession Number:

ADA126242

Title:

Semiconductor Materials for High Frequency Solid State Sources

Descriptive Note:

Quarterly progress rept.

Corporate Author:

SCIENTIFIC RESEARCH ASSOCIATES INC GLASTONBURY CT

Personal Author(s):

Report Date:

1983-03-09

Pagination or Media Count:

7.0

Abstract:

The broad goal of the subject contract is to suggest candidate materials for high frequency device operation. During the initial phase of the study, attention has been focused on defining the general role of the band structure and associated scattering processes in determining the response of semiconductors to transient high-speed electrical signals. Moments of the Boltzmann transport equation form the basis of the study, and the scattering rates define the semiconductor under study. The selection of semiconductor materials proceeds from a set of simple, yet significant, set of scaling principles. During the first quarter scaling was associated with what can formally be identified as velocity invariants, but which in more practical terms identifies the relative speed advantages of e.g., InP over GaAs.

Subject Categories:

  • Electrical and Electronic Equipment
  • Solid State Physics
  • Radiofrequency Wave Propagation

Distribution Statement:

APPROVED FOR PUBLIC RELEASE