Accession Number:

ADA125976

Title:

Theoretical Modeling of EMP Effects in Semiconductor Junction Devices

Descriptive Note:

Final rept.

Corporate Author:

LAWRENCE LIVERMORE NATIONAL LAB CA

Personal Author(s):

Report Date:

1983-02-01

Pagination or Media Count:

42.0

Abstract:

This report discusses various damage mechanisms and their effects on the performance of semiconductor devices, and some of the important theoretical models which are used to describe second breakdown phenomena. The dominant mechanism responsible for the occurrence of second breakdown is probably the thermal excitation of electrons from a devices valence band thermal mode second breakdown conclusions from theoretical calculations based on three different approximations seem to support this model. Current mode breakdown, another form of second breakdown, is discussed in terms of the role it plays in determining the shape of the threshold failure power curve. The purpose of this investigation is, therefore, to assess the existing models and known mechanisms which can cause damage to a p-n junction device in an electromagnetic pulse environment.

Subject Categories:

  • Test Facilities, Equipment and Methods
  • Electricity and Magnetism
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE