Spectroscopic Studies of the Electronic Structure of Metal-Semiconductor and Vacuum-Semiconductor Interfaces.
Final rept. 15 Jun 81-15 Sep 82,
IBM THOMAS J WATSON RESEARCH CENTER YORKTOWN HEIGHTS NY
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The electronic structure and properties of semiconductor surfaces and interfaces as well as relevant metal and semiconductor materials have been investigated under this contract. The emphasis has been on elucidating the electronic properties of these materials and their interfaces, e.g., semiconductor-oxide and metal-oxide interfaces which are of importance in such semiconductor devices as MOSFETS, CCD devices, photovoltaic devices, etc. Extensive studies have been performed as a function of surface preparation including laser annealing and molecular beam epitaxy doping, thickness of adsorbed overlayers, etc. The principal techniques used have been photoelectron spectroscopy using synchrotron radiation and inverse photoemission. Author
- Atomic and Molecular Physics and Spectroscopy
- Nuclear Physics and Elementary Particle Physics
- Solid State Physics