Annual technical summary rept. 1 Oct 81-30 Sep 82,
MASSACHUSETTS INST OF TECH LEXINGTON LINCOLN LAB
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This report covers the work on InP materials carried out with support of the Department of the Air Force during the period 1 October 1981 through 30 September 1982. A part of this support was provided by the Rome Air Development Center. The current objectives of the program are to improve the yield of high-purity polycrystalline InP as source material for crystal growth and to optimize the liquid-encapsulated Czochralski LEC method in order to grow crystals with low dislocation density, low residual impurity concentration and uniform dopant concentration.
- Lasers and Masers