Accession Number:

ADA125348

Title:

InP Materials.

Descriptive Note:

Annual technical summary rept. 1 Oct 81-30 Sep 82,

Corporate Author:

MASSACHUSETTS INST OF TECH LEXINGTON LINCOLN LAB

Personal Author(s):

Report Date:

1982-09-30

Pagination or Media Count:

50.0

Abstract:

This report covers the work on InP materials carried out with support of the Department of the Air Force during the period 1 October 1981 through 30 September 1982. A part of this support was provided by the Rome Air Development Center. The current objectives of the program are to improve the yield of high-purity polycrystalline InP as source material for crystal growth and to optimize the liquid-encapsulated Czochralski LEC method in order to grow crystals with low dislocation density, low residual impurity concentration and uniform dopant concentration.

Subject Categories:

  • Lasers and Masers
  • Crystallography

Distribution Statement:

APPROVED FOR PUBLIC RELEASE