Accession Number:

ADA125181

Title:

Basic Problems in InP Technology.

Descriptive Note:

Final rept. 28 Feb 81-27 Feb 82,

Corporate Author:

HUGHES RESEARCH LABS MALIBU CA

Personal Author(s):

Report Date:

1982-11-01

Pagination or Media Count:

59.0

Abstract:

Procedures for evaluating the thermal stability of semi-insulating InP have been developed. The determination of the concentration of iron in S.I. InP and the migration of Fe during high temperature processing have been identified as a major problem. The effectiveness of plasma deposited Si3N4 and chemical vapor deposited phosphosilicate glass PSG as annealing encapsulants have been evaluated. PSG appears to be the encapsulant of choice at the moment.

Subject Categories:

  • Crystallography
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE