Accession Number:

ADA125014

Title:

LSI/VLSI Ion Implanted GaAs IC Processing

Descriptive Note:

Quarterly technical rept. no. 6, 1 Nov 1981-31 Jan 1982

Corporate Author:

ROCKWELL INTERNATIONAL THOUSAND OAKS CA MICROELECTRONICS RESEARCH AND DEVELOPMENT CENTER

Report Date:

1982-12-01

Pagination or Media Count:

39.0

Abstract:

This report covers the sixth quarter of a program aimed at fully realizing the potential of GaAs for digital integrated circuits employing depletion mode MESFETs. During this reporting period, large single crystals of GaAs have been grown by the Bridgman technique of Crystal Specialties. In the area of processing, a study was made of the dependence of threshold voltage on the post-implantation anneal time. This study indicates that the anneal time used in the IC process is adequate. LSI yield test structures consisting of long parallel meander lines were used to evaluate various options for metal depositions. Magnetron sputtering was the preferred technique. The yield of long chains of interconnects was also evaluated. The 8 x 8 multiplier circuit implemented with SD2FL gates was tested. Work continued on MESFET modeling. The effects of shortening source-drain gap were evaluated.

Subject Categories:

  • Electrical and Electronic Equipment
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE