Accession Number:

ADA123994

Title:

Development of a High-Resolution Thermoprobe.

Descriptive Note:

Final technical rept. 1 Feb 82-31 Jan 83,

Corporate Author:

SRI INTERNATIONAL MENLO PARK CA

Personal Author(s):

Report Date:

1983-01-01

Pagination or Media Count:

30.0

Abstract:

A method is being developed for measuring temperature with very high spatial 0.5 micron and temporal 10 ns resolution. This method, which exploits the light absorption characteristics of semiconductors, is of interest for studying the temperature rises associated with high-rate material deformation processes such as rapid crack propagation, sliding friction and wear, and shock-induced detonation of explosives. This report discusses the analytical and experimental examination of the temperature response of CdS single crystals and vapor-deposited polycrystalline films. A temperature sensitivity of 0.03K and a range of 300K were obtained. These values depended strongly on film thickness, film vapor-deposition processes, and post-deposition annealing, showing that sensitivity and range can be tailored somewhat for specific applications.

Subject Categories:

  • Test Facilities, Equipment and Methods
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE