Silicon Medium Power MESFET.
Final progress rept.,
CORNELL UNIV ITHACA NY SCHOOL OF ELECTRICAL ENGINEERING
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We have studied the feasibility of using SOS MESFETs in the medium power microwave regime and have fabricated various devices to determine the correlation between expected and measured characteristics. The conventional silicon-on-sapphire SOS medium power MESFET has both a distinct advantage and disadvantage over a GaAs MESFET of similar geometry. The single crystal sapphire substrate is an excellent medium for certain microwave elements, such as microstrip lines. The disadvantage of the conventional SOS MESFET lies in the large source-gate resistance arising from the low mobility of electrons in n-type SOS films. The large source-gate resistance reduces the mutual transconductance gm and hence the high frequency figure of merit fT. Author
- Electrical and Electronic Equipment
- Solid State Physics