Accession Number:

ADA123722

Title:

Investigate High Purity GaAs Grown by MOCVD.

Descriptive Note:

Final rept. 6 Feb 80-5 Feb 81,

Corporate Author:

ROCKWELL INTERNATIONAL THOUSAND OAKS CA MICROELECTRONICS RESEARCH AND DEVELOPMENT CENTER

Personal Author(s):

Report Date:

1981-10-01

Pagination or Media Count:

90.0

Abstract:

An intensive study of the effects pressure on the impurity incorporation in MOCVD growth of GaAs has been undertaken. It is found that improvement in the purity of GaAs can be achieved by performing growth at reduced pressure 0.1 atm. and that significant improvements in surface morphology also result. The total purity is however still controlled by the purity of commercially available source materials, trimethylgallium and arsine. Detailed characterization of the starting materials mass and emission spectrometry and the resultant films far infrared photoconductivity, photoluminescence, and transport properties suggest that C, Si, and Zn are the dominant impurities in the GaAs grown with available materials. Repurification of the TMGa was undertaken to understand its role in contributing to the residual background level. Different sources of TMGa were evaluated and two were chosen for repurification. Our results indicate that the best available materials are not improved much by the purification used in these studies, but substantial improvement can be made in less pure material.

Subject Categories:

  • Crystallography
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE