Accession Number:

ADA123380

Title:

Capabilities and Potential of Millimeter-Wave IMPATT Devices.

Descriptive Note:

Interim rept. Mar 81-Aug 82,

Corporate Author:

MICHIGAN UNIV ANN ARBOR ELECTRON PHYSICS LAB

Personal Author(s):

Report Date:

1982-11-01

Pagination or Media Count:

162.0

Abstract:

Theoretical investigations of IMPATT diodes are carried out at 30, 40, 60 and 94 GHz. GaAs, Si and InP diodes are simulated. Several single- and double-drift doping profiles are considered. Extensive results as a function of RF voltage amplitude and dc current density are presented. Taking thermal resistance into account, the expected CW performance of each structure is presented, such that the maximum allowable diode temperature is 525 deg K. Matching each device to 1-ohm circuit resistance gives an estimate of maximum obtainable pulsed power. Finally, CW and pulsed performance for all structures and materials are compared over the entire frequency range simulated. Author

Subject Categories:

  • Electrical and Electronic Equipment
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE