Accession Number:

ADA123299

Title:

Microwave Semiconductor Research - Materials, Devices, Circuits. GaAs Ballistic Electron Transistors Using Buried Metal Gates.

Descriptive Note:

Annual technical rept. 1 May 81-30 Apr 82,

Corporate Author:

CORNELL UNIV ITHACA NY

Report Date:

1982-12-01

Pagination or Media Count:

62.0

Abstract:

This program covers the growth and assessment of Gallium Arsenide, and related compounds and alloys, for use in microwave, millimeter, and optical devices. It also covers the processing of the material into devices, and the testing of the devices. Both molecular beam epitaxy MBE and organo-metallic vapor phase epitaxy OMVPE are used for growth. Modulation doped heterostructures and very short gate field effect transistors are two areas covered. The following is a list of tasks pursued. Author

Subject Categories:

  • Electrical and Electronic Equipment
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE