Accession Number:

ADA114798

Title:

LSI/VLSI Ion Implanted GaAs IC Processing

Descriptive Note:

Quarterly technical rept. no. 4, 1 May-31 Jul 1981

Corporate Author:

ROCKWELL INTERNATIONAL THOUSAND OAKS CA MICROELECTRONICS RESEARCH AND DEVELOPMENT CENTER

Personal Author(s):

Report Date:

1982-02-10

Pagination or Media Count:

41.0

Abstract:

This report covers the fourth quarter of a program on LSIVLSI ion implanted planar GaAs integrated circuit processing. The goal of this program is to realize the full potential of GaAs digital integrated circuits employing depletion mode MESFETs by developing the necessary processing methods and material capabilities to extend device complexity to VLSI. In the fourth quarter fabrication of the first wafers with mask set AR6, the last mask set to be employed with one inch wafers, was completed. Work on circuit reliability has continued, while process steps that may be limiting circuit yield are being investigated.

Subject Categories:

  • Electrical and Electronic Equipment
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE