Accession Number:

ADA114713

Title:

Charge Generation and Recombination in Silicon Dioxide from Heavy Charged Particles

Descriptive Note:

Technical rept.

Corporate Author:

HARRY DIAMOND LABS ADELPHI MD

Personal Author(s):

• Oldham, Timothy R.

Report Date:

1982-04-01

Pagination or Media Count:

79.0

Abstract:

The purpose of this study was to determine the amount of ionization from a heavy charged particle that would escape recombination in a thin Si02 film. The implications of these findings for the operation of future microelectronic circuits are discussed briefly. The MOS capacitors were irradiated with 2-MeV alpha particles or with 700-keV protons. The flatband voltage shift was determined by using the well-known capacitance--voltage C-V technique. This voltage shift is proportional to the amount of ionization that escapes recombination in the Si02. The experimental results agree very well with a modified version of the columnar recombination model first proposed by George Jaffe in 1913. Jaffe developed an approximate analytical solution that is not entirely satisfactory. However, by using a large digital computer, one can solve Jaffes exact differential equation numerically. These results are much less than the yield that one would expect for other forms of radiation. For this reason, one can probably conclude that electronic devices will probably not fail from single particle induced ionization until the devices are much smaller than those now on the drawing boards.

Descriptors:

• *ANALYTICAL CHEMISTRY
• *CHARGED PARTICLES
• *DIFFERENTIAL EQUATIONS
• *IONIZATION
• *MICROELECTRONICS
• *RECOMBINATION REACTIONS
• DIGITAL COMPUTERS
• ELECTRONIC EQUIPMENT
• ENGINEERING DRAWINGS
• METAL OXIDE SEMICONDUCTORS
• MODELS
• SILICON DIOXIDE
• THIN FILMS

Subject Categories:

• Physical Chemistry
• Electrical and Electronic Equipment
• Numerical Mathematics
• Nuclear Physics and Elementary Particle Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE