Accession Number:

ADA113808

Title:

GaAs Surface Passivation for Device Applications.

Descriptive Note:

Interim technical rept. no. 5, 1 Oct 80-31 Mar 81,

Corporate Author:

ROCKWELL INTERNATIONAL THOUSAND OAKS CA ELECTRONICS RESEARCH CENTER

Report Date:

1981-12-01

Pagination or Media Count:

69.0

Abstract:

This document is the interim report number 5 which covers the period 100180 through 033181 for Contract No. F33615-78-C1591 entitled GaAs Surface Passivation for Device Applications. C-V and I-V measurements are reported for several GaAs 100 MIS samples. Both MBE and bulk grown GaAs samples were studied several of the MBE grown samples had Al1-xGaxAs layers between the GaAs and insulator. Insulators formed by plasma oxidation of the Al1-xGaxAs layers and by deposition of silicon nitride were investigated. A novel As capping technique has been developed to transfer MBE grown Al1-xGaxAs samples in air into another vacuum system without surface contamination. Author

Subject Categories:

  • Atomic and Molecular Physics and Spectroscopy
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE