Accession Number:

ADA113789

Title:

Advanced Submicron FETs.

Descriptive Note:

Semi-annual rept. May-Oct 81,

Corporate Author:

VARIAN ASSOCIATES INC PALO ALTO CA SOLID STATE LAB

Personal Author(s):

• Bandy,S.
• Nishimoto,C.
• Zdasiuk,G.
• Hooper,C.

Report Date:

1982-03-01

Pagination or Media Count:

26.0

Abstract:

Replacing the mushroom gate profile with a better collimated evaporation has resulted in FETs with equivalent performance. Balanced FETs have been fabricated with equivalent dc performance to their unbalanced counterparts, but with inferior rf performance. Author

Descriptors:

• *Field effect transistors
• *Gallium arsenides
• *Low noise amplifiers
• Gates(Circuits)
• Performance(Engineering)
• Direct current
• Epitaxial growth
• Radiofrequency
• Evaporation
• Sources

Subject Categories:

• Electrical and Electronic Equipment
• Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE