Accession Number:

ADA113789

Title:

Advanced Submicron FETs.

Descriptive Note:

Semi-annual rept. May-Oct 81,

Corporate Author:

VARIAN ASSOCIATES INC PALO ALTO CA SOLID STATE LAB

Report Date:

1982-03-01

Pagination or Media Count:

26.0

Abstract:

Replacing the mushroom gate profile with a better collimated evaporation has resulted in FETs with equivalent performance. Balanced FETs have been fabricated with equivalent dc performance to their unbalanced counterparts, but with inferior rf performance. Author

Subject Categories:

  • Electrical and Electronic Equipment
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE