Basic Improvements in Substrate InP Material.
Final rept. Jan 79-Jan 82,
VARIAN ASSOCIATES INC PALO ALTO CA SOLID STATE LAB
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Different methods for the synthesis of Indium Phosphide were devised and growths evaluated for photoluminescence, mobility, carrier concentration, and resistivity. Single crystals of InP were grown doped with Fe, Cr, Zn, and S and evaluated by photoluminescence, van der Pauw analysis and X-ray topography. Author
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