Wideband Monolithic Microwave Amplifier Study.
Annual technical rept. Jul 80-Aug 81,
WISCONSIN UNIV-MADISON DEPT OF ELECTRICAL AND COMPUTER ENGINEERING
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This report discusses distributed amplifier theory in the context of the microwave monolithic GaAs circuit. It is shown that GaAs FET devices dictate that both the input and output transmission lines become lossy which places fundamental limitations on the distributed amplifier concept and results in different constraints than are found in lossless distributed amplifier design. First order theory indicates that gain asymptotically approaches an upper bound and little benefit results from increasing the number of devices beyond certain limits. Author
- Electrical and Electronic Equipment