Integrated Optical Transmitter and Receiver
Status rept. no. 8, 1 Sep-18 Sep 1981
ROCKWELL INTERNATIONAL THOUSAND OAKS CA MICROELECTRONICS RESEARCH AND DEVELOPMENT CENTER
Pagination or Media Count:
Integrated Electronic Driver Development--Of the three start-up lots 2 wafers each for the integrated electronic driver processing initiated last month, the first lot was completed. This included sulphur implanteddiffused planar TELDs and Si implanted FETs. Work continued on the high-speed transmitter packaging. Laser Development--Further laser development await the servicing of the GaAlAsGaAs MOCVD reactor see section D. During this period, work focused on continued high-speed measurements of narrow-diffused stripe laser structures grown by MOCVD, to be implemented into the integrated transmitter structure. Problems Encountered andor Anticipated Work continued on isolating causes for growth control problems encountered last month on the GaAlAsGaAs MOCVD system. These include inability to accurately tune the properties of the GaAlAs layer.
- Non-Radio Communications