Development of a Surface Technology for GaAs Devices.
Final technical rept. Jan-Dec 81,
TECHNISCHE HOCHSCHULE DARMSTADT (GERMANY F R) INST FUER HOCHFREQUENZTECHNIK
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The method of two-step anodisation was investigated further. It was found that inversion-type capacitance increases can also be obtained occasionally by anodizing an Al film only on GaAs. Light emission studies have shown that the emission efficiency depends on the quality of the interface layer. Pulsed-laser experiments for the generation and excitation of electron-hole pairs have demonstrated the importance of charge trapping in an interface region extending more than 100 A into the oxide. Author
- Electrical and Electronic Equipment
- Solid State Physics