Accession Number:

ADA112913

Title:

Development of a Surface Technology for GaAs Devices.

Descriptive Note:

Final technical rept. Jan-Dec 81,

Corporate Author:

TECHNISCHE HOCHSCHULE DARMSTADT (GERMANY F R) INST FUER HOCHFREQUENZTECHNIK

Report Date:

1981-12-01

Pagination or Media Count:

87.0

Abstract:

The method of two-step anodisation was investigated further. It was found that inversion-type capacitance increases can also be obtained occasionally by anodizing an Al film only on GaAs. Light emission studies have shown that the emission efficiency depends on the quality of the interface layer. Pulsed-laser experiments for the generation and excitation of electron-hole pairs have demonstrated the importance of charge trapping in an interface region extending more than 100 A into the oxide. Author

Subject Categories:

  • Electrical and Electronic Equipment
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE