Accession Number:

ADA112501

Title:

Study of the Physics of Insulating Films as Related to the Reliability of Metal-Oxide-Semiconductor (MOS) Devices

Descriptive Note:

Semi-annual technical rept. 1 Jun 30-Nov 1981

Corporate Author:

IBM THOMAS J WATSON RESEARCH CENTER YORKTOWN HEIGHTS NY

Report Date:

1982-02-01

Pagination or Media Count:

122.0

Abstract:

This report covers work on enhanced electron injection into SiO2, studies of limitations on the number of useful writeerase cycles for EAROS devices due to electron trapping in the SiO2, the physics and design of EAROS devices using Si-rich SiO2 charge injectors, and the capture and release of electrons on Na-related sites in SiO2. An automatic system is described for making writeerase cycling measurements of EAROS devices.

Subject Categories:

  • Coatings, Colorants and Finishes
  • Nuclear Physics and Elementary Particle Physics
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE