Accession Number:

ADA110873

Title:

Large-Signal Characterization, Amplifier Design, and Performance of K-Band GaAs MESFETS.

Descriptive Note:

Technical rept.,

Corporate Author:

MASSACHUSETTS INST OF TECH LEXINGTON LINCOLN LAB

Personal Author(s):

Report Date:

1981-12-11

Pagination or Media Count:

68.0

Abstract:

Recent advances in Gallium Arsenide field-effect transistor technology have extended the power amplification capabilities of FETs to the K-Band frequency range. FETs with performance capability of 0.5 watt power output at 20 GHz have been developed. Large-signal S-parameter characterizations of these devices have been utilized in designing power and amplifiers. Transistor performance capability is discussed together with the performance of experimental amplifier designs realized in a microstrip environment. Author

Subject Categories:

  • Electrical and Electronic Equipment
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE