Spontaneous Oscillations in Gallium Arsenide Field Effect Transistors
UNITED TECHNOLOGIES RESEARCH CENTER EAST HARTFORD CT
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We present results of experiments and numerical simulations designed to reveal the presence of spontaneous oscillations arising from negative differential mobility effects in gallium arsenide field effect transistors. The measurements include d.c. and pulsed currentvoltage vs temperature characterization, sampling scope measurements, spectral analysis to 40 GHz and observation of light emission. The simulation is a time dependent large signal transient analysis arising from a fully two-dimensional solution of the self-consistent potential and charge within the device.
- Solid State Physics