Accession Number:

ADA110785

Title:

RF Plasma Annealing on MOS Structures.

Descriptive Note:

Final rept. 1 Feb 79-31 Jan 82,

Corporate Author:

YALE UNIV NEW HAVEN CT DEPT OF ENGINEERING AND APPLIED SCIENCE

Personal Author(s):

Report Date:

1981-12-01

Pagination or Media Count:

237.0

Abstract:

Very Large Scale Integrated Circuits VLSI require advanced processing techniques to achieve the necessary pattern resolution. Some of these techniques, including E-beam or X-ray lithography, plasma or reactive ion etching RIE, and ion implantation, use energetic particles or photons to overcome the resolution limitations associated with the more conventional proesses. As a result, varying degree of radiation damage is frequently introduced in the Metal-SiO2-Si MOS device structure, which causes severe degradation of the circuit performance and reliability. Ever since the radiation effect was recognized as a potential problem for the development of VLSI technology, it has stimulated substantial research interest in many laboratories, in an effort to achieve sufficient level of scientific understanding, and to develop techniques that can best solve this problem.

Subject Categories:

  • Manufacturing and Industrial Engineering and Control of Production Systems
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE