Accession Number:

ADA110736

Title:

Performance Limits on GaAs FET Large- and Small-Signal Circuits.

Descriptive Note:

Final rept. 1 Mar 80-30 May 81,

Corporate Author:

WASHINGTON UNIV ST LOUIS MO DEPT OF ELECTRICAL ENGINEERING

Personal Author(s):

Report Date:

1981-10-01

Pagination or Media Count:

200.0

Abstract:

A describing function approach to large-signal frequency-domain simulations of nonlinear microwave circuits is presented. It is used to examine gain saturation and harmonic distortion of a 0.5 micron gate FET. The simulation uses a previously reported FET model, modified to include gate breakdown and substrate leakage current. Temperature effects are studied. It is found that gain saturation does not depend on gate breakdown. The model is verified by comparing theoretical and experimental performance. Author

Subject Categories:

  • Electrical and Electronic Equipment
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE