Characterization of Electrically Active Defects in Si Using CCD Image Sensors
Quarterly technical rept. 30 Jul-31 Oct 1976
TEXAS INSTRUMENTS INC DALLAS CENTRAL RESEARCH LABS
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The purpose of this project is to determine the nature and origin of defects that produce dark-current spikes in CCD area imagers. During this quarter, silicon wafers of various crystallographic orientations, and with established identity with respect to the boules from which they were grown, were obtained. Processing of the first lot of devices has commenced, as has structural characterization of the starting material. Two technical problems pertaining to structural characterization techniques have been treated in some detail. Their solution will result in a significant increase in the quality and quantity of data obtained during the course of this investigation. X-ray topography has been examined from a theoretical standpoint to determine the operating conditions that will result in maximum sensitivity to various types of structural defects. A multistep technique to thin a selected region of a CCD area imager that contains a dark-current defect to a thickness of approx. 5000 A required for transmission electron microscopy has been devised and is under development. Preliminary studies of dark current were performed to ascertain effects that could be attributed to starting material and backside damage.
- Physical Chemistry
- Electricity and Magnetism