Accession Number:

ADA110433

Title:

Nuclear Transmutation Doping of GaAs.

Descriptive Note:

Final technical rept. 1 Jun 80-30 Jun 81,

Corporate Author:

CHICAGO UNIV IL JAMES FRANCK INST

Personal Author(s):

Report Date:

1981-09-01

Pagination or Media Count:

50.0

Abstract:

Shallow donors have been introduced into GaAs crystals by irradiation with thermal neutrons and subsequent nuclear transmutation. Good agreement was found between the measured concentrations of added donors and the values expected from the neutron capture cross sections and the neutron fluences used. This doping method is approximately 1000 times more efficient in GaAs than in Si because of the higher abundances and neutron capture cross sections of the transmutable isotopes in GaAs. In epitaxially grown GaAs of high purity, the recoil and radiation damage associated with transmutation doping can be removed by annealing at about 600 C which is below the critical temperature for As effusion. The electronic transport properties of transmutation doped GaAs samples were studied between 1.4 and 450K of concentrations both above and below the metal-nonmetal transition. We found that transmutation doping is a convenient method for introducing a desired concentration of shallow donors into GaAs crystals for modifying their electronic properties.

Subject Categories:

  • Crystallography
  • Nuclear Physics and Elementary Particle Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE