Accession Number:

ADA110087

Title:

Chemically Derivatized Semiconductor Photoelectrodes.

Descriptive Note:

Interim technical rept.,

Corporate Author:

MASSACHUSETTS INST OF TECH CAMBRIDGE DEPT OF CHEMISTRY

Personal Author(s):

Report Date:

1982-01-04

Pagination or Media Count:

46.0

Abstract:

Highlights of research results from the chemical derivatization of n-type semiconductors with l,l-ferrocenediyldimethylsilane, 1 and its dichloro analogue, 2 and from the derivatization of p-type semiconductors with N,N-bis3-trimethoxysilylpropyl-4,4-bipyridiniumdibromide, 3 are presented. Research Shows that molecular derivatization with 2 can be used to suppress photoanodic corrosion of n-type Si derivatization of p-type Si with 3 can be used to improve photoreduction kinetics of horseheart ferricytochrome c derivatization of p-type Si with 3 followed by incorporation of PtO improves photoelectrochemical H2 production efficiency. Strongly interacting reagents can alter semiconductorelectrolyte interface energetics and surface state distributions as illustrated by n-type WS2I- interactions and by differing etch procedures for n-type CdTe. Author

Subject Categories:

  • Radiation and Nuclear Chemistry
  • Electrical and Electronic Equipment
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE