Chemically Derivatized Semiconductor Photoelectrodes.
Interim technical rept.,
MASSACHUSETTS INST OF TECH CAMBRIDGE DEPT OF CHEMISTRY
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Highlights of research results from the chemical derivatization of n-type semiconductors with l,l-ferrocenediyldimethylsilane, 1 and its dichloro analogue, 2 and from the derivatization of p-type semiconductors with N,N-bis3-trimethoxysilylpropyl-4,4-bipyridiniumdibromide, 3 are presented. Research Shows that molecular derivatization with 2 can be used to suppress photoanodic corrosion of n-type Si derivatization of p-type Si with 3 can be used to improve photoreduction kinetics of horseheart ferricytochrome c derivatization of p-type Si with 3 followed by incorporation of PtO improves photoelectrochemical H2 production efficiency. Strongly interacting reagents can alter semiconductorelectrolyte interface energetics and surface state distributions as illustrated by n-type WS2I- interactions and by differing etch procedures for n-type CdTe. Author
- Radiation and Nuclear Chemistry
- Electrical and Electronic Equipment
- Solid State Physics