Accession Number:

ADA109703

Title:

Effects of Surface Conditions on Carrier Transport in III-V Compounds.

Descriptive Note:

Final rept. 1 Sep 78-1 Mar 81,

Corporate Author:

ROCKWELL INTERNATIONAL THOUSAND OAKS CA MICROELECTRONICS RESEARCH AND DEVELOPMENT CENTER

Report Date:

1981-11-01

Pagination or Media Count:

113.0

Abstract:

Surface chemical and potential measurements carried out by XPS x-ray photo-emission spectroscopy are reported for several GaAS materials. The GaAs samples had 100 and 110 orientations, n- and p-type doping, and both bulk and VPE grown materials were studied. Various surface treatments which included chemical etching, annealing, oxidation, gas exposure, and deposition of materials were investigated. The thermal cleaning process was shown to be associated with the surface chemical reaction As2O3 2GaAs yields Ga2O3 4xAsx gas. A variation in GaAs interface Fermi-level position of up to 0.7 eV was observed. The difference in interface Fermi-level position for n- and p-type samples subjected to identical surface treatments was observed to be nearly constant at approx. 0.3 eV. A single defect model with multiple charge states is suggested as the simplest explanation for the observed interface-potential variations. Progress toward the development of a contactless C-V apparatus is described. Author

Subject Categories:

  • Physical Chemistry
  • Nuclear Physics and Elementary Particle Physics
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE