Fermi Level Pinning at Semiconductor Electrodes.
TEXAS UNIV AT AUSTIN DEPT OF CHEMISTRY
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The shift in Vfb of several single crystal semiconductors p-Si, p-GaAs, n-TiO2, n-Cds, n-MoSe2, n- and p-WSe2 was investigated in MeCN containing a number of redox couples. While Vfb shifts with Vredox for p-Si, p-GaAs, n-TiO2 and n-Cds for the layered compounds n-MoSe2, n- and p-WSe2 was essentially independent of Vredox. Author
- Electrical and Electronic Equipment
- Solid State Physics