Accession Number:

ADA109478

Title:

Fermi Level Pinning at Semiconductor Electrodes.

Descriptive Note:

Technical rept.,

Corporate Author:

TEXAS UNIV AT AUSTIN DEPT OF CHEMISTRY

Report Date:

1981-12-21

Pagination or Media Count:

23.0

Abstract:

The shift in Vfb of several single crystal semiconductors p-Si, p-GaAs, n-TiO2, n-Cds, n-MoSe2, n- and p-WSe2 was investigated in MeCN containing a number of redox couples. While Vfb shifts with Vredox for p-Si, p-GaAs, n-TiO2 and n-Cds for the layered compounds n-MoSe2, n- and p-WSe2 was essentially independent of Vredox. Author

Subject Categories:

  • Electrical and Electronic Equipment
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE