Accession Number:

ADA109429

Title:

Studies of Surfaces and Interfaces on III-V Compounds Using UV and Soft X-ray Excitation

Descriptive Note:

Corporate Author:

STANFORD UNIV CA STANFORD ELECTRONICS LABS

Personal Author(s):

Report Date:

1981-01-01

Pagination or Media Count:

2.0

Abstract:

The objective of this work is to extend our knowledge of the bulk and surface electronic structure of III-V semiconductors, and their interfaces with metals, insulators, and other semiconductors, and to develop their application to a variety of electronic and opto-electronic device structures. Our approach is to start with atomically clean semiconductor surfaces, often prepared by cleaving single crystals in situ under ultra-high vacuum conditions. Surfaces may also be prepared by ion sputtering, heat cleaning, laser treatment, etc. These surfaces are then fully characterized by a variety of techniques, including angle-resolved and angle-integrated ultraviolet UPS and X-ray XPS photoelectron spectroscopies often using synchroton radiation as the light source, Auger electron spectroscopy, low energy electron diffraction, contact potential difference measurements using the Kelvin probe method, and photoluminescence. The chemical, electronic, and structural interactions of the semiconductor surface with adsorbates may then be studied by exposing the clean surface to gases or to atomic or molecular fluxes of some other substance. These exposures may be carried out on heated or cooled substrates, under laser irradiation, or influenced by a variety of other controlled perturbations.

Subject Categories:

  • Atomic and Molecular Physics and Spectroscopy
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE