Accession Number:

ADA109052

Title:

Impurity and Defect Characterization in Epitaxial GaAs, InP and the Ternary and Quaternary Compound Semiconductors

Descriptive Note:

Annual interim rept. 1 Aug 80-31 Jul 81

Corporate Author:

MASSACHUSETTS INST OF TECH CAMBRIDGE FRANCIS BITTER NATIONAL MAGNET LAB

Personal Author(s):

Report Date:

1981-10-14

Pagination or Media Count:

17.0

Abstract:

An ultimate method for the unambiguous identification of donors in epitaxial GaAs and related compounds has been devised and demonstrated. A specimen is grown by means of the molecular beam epitaxy technique and is lightly doped with a single donor element during growth so as to render the specimen n-type. The far infrared photoconductivity method of spectroscopy is used to determine the energy difference between the electron ground state and the next higher excited state 2p, m -1 at low temperature and in high intensity magnetic fields. A signature curve of energy vs. magnetic field intensity is generated for various values of applied magnetic field intensity. Thereafter, any time that this particular element is present as a residual donor in any other specimen, a single measurement at any field will yield a point which must lie on the signature curve of the particular donor element. By this means any residual donor can be identified without ambiguity. We have generated and published signature curves for Sn, Se, Si, Ge and sulfur. Author

Subject Categories:

  • Crystallography
  • Particle Accelerators
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE