Accession Number:

ADA109033

Title:

Ion Implantation and Laser Processing of III-V Compound Semiconductors with Applications to the Fabrication of Microwave Devices

Descriptive Note:

Final rept. 1 Jun 78-31 May 81

Corporate Author:

STANFORD UNIV CA SOLID-STATE ELECTRONICS LAB

Personal Author(s):

Report Date:

1981-10-01

Pagination or Media Count:

44.0

Abstract:

Research was carried out on laser processing of III-V Compound semiconductors, concentrating on the mechanisms that are responsible for annealing ion implanted dopants in GaAs and on the possibility of obtaining laser-assisted diffusion of dopants. Seven papers describing this work have been written during the period covered by this report. A brief overview of these papers is given. The full papers are attached for detailed presentation of experimental conditions, theoretical calculations and results. Author

Subject Categories:

  • Lasers and Masers
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE